- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371558 > 2SK4108 (Toshiba Corporation) RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK4108 |
| 廠商： | Toshiba Corporation |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開關(guān)穩(wěn)壓器 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 293K |
| 代理商： | 2SK4108 |
2SK4108
2007-06-29
2
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= ±25 V, V
DS
= 0 V
—
—
±10
μ
A
Gate
source breakdown voltage
V
(BR) GSS
I
G
= ±10
μ
A, V
DS
= 0 V
±30
—
—
V
Drain cutoff current
I
DSS
V
DS
= 500 V, V
GS
= 0 V
—
—
100
μ
A
Drain
source breakdown voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
500
—
—
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
2.0
—
4.0
V
Drain
source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 10 A
—
0.21
0.27
Ω
Forward transfer admittance
|Y
fs
|
V
DS
= 10 V, I
D
= 10 A
4.0
14
—
S
Input capacitance
C
iss
—
3400
—
Reverse transfer capacitance
C
rss
—
25
—
Output capacitance
C
oss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
—
320
—
pF
Rise time
t
r
—
70
—
Turn on time
t
on
—
130
—
Fall time
t
f
—
70
—
Switching time
Turn off time
t
off
—
280
—
ns
Total gate charge (gate
source
plus gate
drain)
Q
g
—
70
—
Gate
source charge
Q
gs
—
45
—
Gate
drain (“Miller”) charge
Q
gd
V
DD
≈
400 V, V
GS
= 10 V, I
D
= 20 A
—
25
—
nC
Source
Drain Ratings and Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
I
DR
—
—
—
20
A
Pulse drain reverse current
(Note 1)
I
DRP
—
—
—
80
A
Forward voltage (diode)
V
DSF
I
DR
= 20 A, V
GS
= 0 V
—
—
1.7
V
Reverse recovery time
t
rr
—
1300
—
ns
Reverse recovery charge
Q
rr
I
DR
= 20 A, V
GS
= 0 V
dI
DR
/ dt = 100 A /
μ
s
—
20
—
μ
C
Marking
R
L
=
20
Ω
V
DD
～
200 V
0 V
V
GS
10 V
5
Ω
I
D
=
10A
出力
Duty
<
1%, t
w
=
10
μ
s
K4108
TOSHIBA
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK4115 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 2SK417 | 2SK417 |
| 2SK447 | 2SK447 |
| 2SK447 | TECHNICAL DATA |
| 2SK525 | SILICON P-CHANNEL MOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK4108(F) | 制造商:Toshiba 功能描述:Nch 500V 20A 0.27@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N CH 20A 500V TO3P 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N CH, 20A, 500V, TO3P |
| 2SK4108(F,T) | 功能描述:MOSFET N-Ch FET VDSS 500V RDS 0.21 Ohm Yfs 14S RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK4108(S1V,E,S) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK4108(STA1,E,S) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK4111(Q,T) | 功能描述:MOSFET MOSFET N-Ch, 600V, 10A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。