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參數(shù)資料
| 型號： | 2SK4101FS |
| 元件分類： | JFETs |
| 英文描述： | 6.4 A, 650 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220F-3FS, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 268K |
| 代理商： | 2SK4101FS |
2SK4101FS
No. A1366-2/5
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=10mA, VGS=0V
650
V
Zero-Gate Voltage Drain Current
IDSS
VDS=520V, VGS=0V
100
μA
Gate-to-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
±100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
3
5
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=3.5A
2.3
4.6
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=3.5A, VGS=10V
0.85
1.1
Ω
Input Capacitance
Ciss
VDS=30V, f=1MHz
750
pF
Output Capacitance
Coss
VDS=30V, f=1MHz
136
pF
Reverse Transfer Capacitance
Crss
VDS=30V, f=1MHz
28
pF
Turn-ON Delay Time
td(on)
See specied Test Circuit.
21
ns
Rise Time
tr
See specied Test Circuit.
40
ns
Turn-OFF Delay Time
td(off)
See specied Test Circuit.
89
ns
Fall Time
tf
See specied Test Circuit.
31
ns
Total Gate Charge
Qg
VDS=200V, VGS=10V, ID=7A
28.5
nC
Gate-to-Source Charge
Qgs
VDS=200V, VGS=10V, ID=7A
5.2
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=200V, VGS=10V, ID=7A
16
nC
Diode Forward Voltage
VSD
IS=7A, VGS=0V
0.9
1.2
V
Package Dimensions
unit : mm (typ)
7528-001
Switching Time Test Circuit
Avalanche Resistance Test Circuit
P.G
RGS=50Ω
G
S
ID=3.5A
RL=57Ω
VDD=200V
VOUT
2SK4101FS
D
PW=10μs
D.C.≤0.5%
VIN
10V
0V
VIN
50Ω
≥50Ω
RG
VDD
L
10V
0V
2SK4101FS
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220F-3FS
10.16
0.8
15.87
12.98
3.3
6.68
3.23
1.47 MAX
15.8
4.7
2.54
2.76
12
3
0.5
2.54
3.18
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| 2SK4107 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator Applications |
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