參數(shù)資料
型號(hào)： 2SK4070(1)-S27-AY
廠商： NEC Corp.
英文描述： MOS FIELD EFFECT TRANSISTOR
中文描述： MOS場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 211K
代理商： 2SK4070(1)-S27-AY
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK4070
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D18573EJ2V0DS00 (2nd edition)
Date Published June 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006
DESCRIPTION
The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics,
and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
Low on-state resistance
R
DS(on)
= 11
Ω
MAX. (V
GS
= 10
V, I
D
= 0.5
A)
Low gate charge
Q
G
= 5 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 1.0 A)
Gate voltage rating :
±
30 V
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK4070-S15-AY
Note
Tube 70 p/tube
TO-251 (MP-3-a) typ. 0.39 g
2SK4070(1)-S27-AY
Note
Tube 75 p/tube
TO-251 (MP-3-b) typ. 0.34 g
2SK4070-ZK-E1-AY
Note
2SK4070-ZK-E2-AY
Note
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZK) typ. 0.27 g
Note
Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
600
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±
30
V
Drain Current (DC) (T
C
= 25
°
C)
Drain Current (pulse)
Note1
I
D(DC)
±
1.0
A
I
D(pulse)
±
4.0
A
Total Power Dissipation (T
C
= 25
°
C)
Total Power Dissipation (T
A
= 25
°
C)
Note2
P
T2
P
T1
22
W
1.0
W
Channel Temperature
T
ch
150
°
C
Storage Temperature
Single Avalanche Current
Note3
Single Avalanche Energy
Note3
T
stg
55 to
+
150
°
C
I
AS
0.8
A
E
AS
38.4
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on glass epoxy board of 40 mm × 40 mm × 1.6 mm
3.
Starting T
ch
= 25°C, V
DD
= 150 V, R
G
= 25
Ω
,
V
GS
= 20
→
0 V
(TO-251)
(TO-252)
<R>
相關(guān)PDF資料
PDF描述
2SK4070-S15-AY MOS FIELD EFFECT TRANSISTOR
2SK4070-ZK-E1-AY MOS FIELD EFFECT TRANSISTOR
2SK4070-ZK-E2-AY MOS FIELD EFFECT TRANSISTOR
2SK4078 SWITCHING N-CHANNEL POWER MOS FET
2SK4078-ZK-E1-AY SWITCHING N-CHANNEL POWER MOS FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK4070-S15-AY 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
2SK4070-ZK-E1-AY 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
2SK4070-ZK-E2-AY 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
2SK4073LS 功能描述:MOSFET N-CH 60V 90A TO-220FI RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK4074LS 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*