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參數(shù)資料
| 型號(hào)： | 2SK4026 |
| 廠商： | Toshiba Corporation |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開(kāi)關(guān)穩(wěn)壓器 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 216K |
| 代理商： | 2SK4026 |
2SK4026
2006-11-08
2
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
±
25 V, V
DS
=
0 V
±
10
μ
A
Gate-source breakdown voltage
V
(BR) GSS
I
G
=
±
10
μ
A, V
DS
=
0 V
±
30
V
Drain cutoff current
I
DSS
V
DS
=
600 V, V
GS
=
0 V
100
μ
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
=
10 mA, V
GS
=
0 V
600
V
Gate threshold voltage
V
th
V
DS
=
10 V, I
D
=
1 mA
2.0
4.0
V
Drain-source ON resistance
R
DS (ON)
V
GS
=
10 V, I
D
=
0.5 A
6.4
9.0
Ω
Forward transfer admittance
Y
fs
V
DS
=
10 V, I
D
=
0.5 A
0.4
0.85
S
Input capacitance
C
iss
190
Reverse transfer capacitance
C
rss
15
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
55
pF
Rise time
t
r
12
Turn-on time
t
on
55
Fall time
t
f
40
Switching time
Turn-off time
t
off
90
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
9
Gate-source charge
Q
gs
3.5
Gate-drain (“Miller”) charge
Q
gd
V
DD
～
400 V, V
GS
=
10 V, I
D
=
1 A
5.5
nC
Source-Drain Diode Ratings and Characteristics
(Ta
=
25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
I
DR
1
A
Pulse drain reverse current
I
DRP
2
A
Diode forward voltage
V
DSF
I
DR
=
1 A, V
GS
=
0 V
1.7
V
Reverse recovery time
t
rr
400
ns
Reverse recovery charge
Q
rr
I
DR
=
1 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/
μ
s
1.4
μ
C
Marking
Duty
<
1%, t
w
=
10
μ
s
0 V
10
V
V
GS
R
L
=
600
Ω
V
DD
～
300 V
I
D
=
0.5
A
V
OUT
5
Ω
K4026
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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