參數(shù)資料
型號(hào): 2SK4015
元件分類: JFETs
英文描述: 10 A, 600 V, 0.86 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-10U1B, SC-67, 3 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 215K
代理商: 2SK4015
2SK4015
2007-06-29
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate-source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cutoff current
IDSS
VDS = 600 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 5 A
0.60
0.86
Ω
Forward transfer admittance
Yfs
VDS = 10 V, ID = 5 A
3.7
7.4
S
Input capacitance
Ciss
1500
Reverse transfer capacitance
Crss
15
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
180
pF
Rise time
tr
22
Turn-on time
ton
50
Fall time
tf
36
Switching time
Turn-off time
toff
180
ns
Total gate charge
Qg
42
Gate-source charge
Qgs
23
Gate-drain charge
Qgd
VDD 400 V, VGS = 10 V, ID = 10 A
19
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
10
A
Pulse drain reverse current
(Note 1)
IDRP
40
A
Forward voltage (diode)
VDSF
IDR = 10 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
170
ns
Reverse recovery charge
Qrr
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/μs
0.6
μC
Marking
RL =
40
Ω
0 V
10 V
VGS
VDD 200 V
ID = 5 A
VOUT
50
Ω
Duty <= 1%, tw = 10 μs
Lot No.
A line indicates a
lead (Pb)-free package or
lead (Pb)-free finish.
K401 5
Part No. (or abbreviation code)
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