參數(shù)資料
型號(hào): 2SK3934
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
中文描述: 東芝場(chǎng)效應(yīng)晶體管硅?頻道馬鞍山類型(- MOSVI)
文件頁(yè)數(shù): 5/6頁(yè)
文件大?。?/td> 75K
代理商: 2SK3934
2SK3934
2004-12-03
5
15
V
15
V
TEST CIRCUIT
WAVE FORM
I
AR
B
VDSS
V
DD
V
DS
R
G
=
25
V
DD
=
90 V, L
=
8.13 mH
=
VDD
BVDSS
BVDSS
2
L
2
1
AS
CHANNEL TEMPERATURE (INITIAL)
T
ch
(°C)
E
AS
– T
ch
A
A
1200
1000
800
600
200
0
25
50
75
100
125
150
r
th
– t
w
PULSE WIDTH t
w
(s)
N
I
t
/
t
0.01
10
0.1
1
10
100
1
10
100
1
10
0.001
DRAIN
SOURCE VOLTAGE V
DS
(V)
SAFE OPERATING AREA
D
D
0.1
1
1
10
100
10
1000
100
0.01
Duty=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
*
SINGLE NONREPETITIVE PULSE
Tc
=
25°C
CURVES
MUST
BE
DERATED
LINEALY WITH INCREASE IN
TEMPERATURE
DC OPERATION
Tc
=
25°C
1 ms
*
V
ID max (CONTINUOUS)
*
ID max (PULSED)
*
100
μ
s
*
T
PDM
t
Duty
=
t/T
Rth (ch-c)
=
2.5°C/W
400
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