參數(shù)資料
型號(hào): 2SK3845
元件分類(lèi): JFETs
英文描述: 70 A, 60 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-16C1B, 3 PIN
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 321K
代理商: 2SK3845
2SK3845
2006-08-17
2
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
mA
Drain cut-OFF current
IDSS
VDS = 60V, VGS = 0 V
100
mA
V (BR) DSS
ID = 10mA, VGS = 0 V
60
Drain-source breakdown voltage
V (BR) DSX
ID = 10mA, VGS = -20 V
35
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 35 A
4.7
5.8
m
W
Forward transfer admittance
Yfs
VDS = 10 V, ID = 35 A
44
88
S
Input capacitance
Ciss
12400
Reverse transfer capacitance
Crss
700
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
1100
pF
Rise time
tr
17
Turn-ON time
ton
44
Fall time
tf
35
Switching time
Turn-OFF time
toff
200
ns
Total gate charge
(gate-source plus gate-drain)
Qg
196
Gate-source charge
Qgs
148
Gate-drain (“miller”) charge
Qgd
VDD ~- 48 V, VGS = 10 V, ID = 70 A
48
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
70
A
Pulse drain reverse current
(Note 1)
IDRP
280
A
Forward voltage (diode)
VDSF
IDR = 70 A, VGS = 0 V
-1.5
V
Reverse recovery time
trr
70
ns
Reverse recovery charge
Qrr
IDR = 70 A, VGS = 0 V,
dIDR/dt = 50 A/ms
77
nC
Marking
Duty <= 1%, tw = 10 ms
0 V
10 V
VGS
RL = 0.86 W
VDD≒30 V
ID = 35 A
VOUT
50
W
K3845
TOSHIBA
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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