參數(shù)資料
型號： 2SK3798
廠商： Toshiba Corporation
元件分類： 基準(zhǔn)電壓源/電流源
英文描述： RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
中文描述： 抗輻射高效，5安培開關(guān)穩(wěn)壓器
文件頁數(shù)： 2/6頁
文件大?。?/td> 222K
代理商： 2SK3798
2SK3798
2005-01-26
2
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
±
30 V, V
DS
=
0 V
±
10
μ
A
Gate-source breakdown voltage
V
(BR) GSS
I
G
=±
10
μ
A, V
DS
=
0 V
±
30
V
Drain cut-off current
I
DSS
V
DS
=
720 V, V
GS
=
0 V
100
μ
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
=
10 mA, V
GS
=
0 V
900
V
Gate threshold voltage
V
th
V
DS
=
10 V, I
D
=
1 mA
2.0
4.0
V
Drain-source ON resistance
R
DS (ON)
V
GS
=
10 V, I
D
=
2 A
2.5
3.5
Forward transfer admittance
Y
fs
V
DS
=
20 V, I
D
=
2 A
1.4
2.8
S
Input capacitance
C
iss
800
Reverse transfer capacitance
C
rss
20
Output capacitance
C
oss
V
DS
=
25 V, V
GS
=
0 V, f
=
1 MHz
85
pF
Rise time
t
r
20
Turn-on time
t
on
65
Fall time
t
f
45
Switching time
Turn-off time
t
off
165
ns
Total gate charge
Q
g
26
Gate-source charge
Q
gs
14
Gate-drain charge
Q
gd
V
DD
～
400 V, V
GS
=
10 V, I
D
=
4 A
12
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
I
DR
4
A
Pulse drain reverse current
(Note 1)
I
DRP
12
A
Forward voltage (diode)
V
DSF
I
DR
=
4 A, V
GS
=
0 V
1.7
V
Reverse recovery time
t
rr
1100
ns
Reverse recovery charge
Q
rr
I
DR
=
4 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/
μ
s
8.3
μ
C
Marking
R
L
=
100
0 V
10
V
V
GS
V
DD
～
200 V
I
D
=
2
A
V
OUT
50
Duty
<
1%, t
w
=
10
μ
s
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3798
Part No. (or abbreviation code)
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