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參數(shù)資料
| 型號： | 2SK3779-01R |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET |
| 中文描述： | 59 A, 250 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 103K |
| 代理商： | 2SK3779-01R |
3
2SK3779-01R
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
μ
A
V
Tch [
°
C]
0
10
20
30
40
50
60
70
80
90 100 110 120 130 140
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=59A,Tch=25
°
C
200V
125V
Vcc= 50V
10
-1
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
10
4
C
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.1
1
10
100
1000
I
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
μ
s pulse test,Tch=25
°
C
10
-1
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
10
4
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=72V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t
ID [A]
0
25
50
75
100
125
150
0
200
400
600
800
1000
1200
I
AS
=24A
I
AS
=36A
I
AS
=59A
starting Tch [
°
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=59A
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3780-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 29 Milliohms;ID 73A;TO-247;PD 410W;VGS +/-3 |
| 2SK3781-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK3788-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 21 Milliohms;ID 92A;TO-247;PD 410W;VGS +/-3 |
| 2SK3789-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK3793 | 制造商:Renesas Electronics Corporation 功能描述: |
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