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參數(shù)資料
| 型號： | 2SK3771-01MR |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET |
| 中文描述： | 29 A, 100 V, 0.059 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 107K |
| 代理商： | 2SK3771-01MR |
3
2SK3771-01MR
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
μ
A
V
Tch [
°
C]
0
5
10
15
Qg [nC]
20
25
30
35
0
2
4
6
8
10
12
14
Vcc=50V
Typical Gate Charge Characteristics
VGS=f(Qg):ID=29A,Tch=25
°
C
10
0
10
1
10
2
10
1
10
2
10
3
C
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
VSD [V]
1.00
1.25
1.50
0.1
1
10
100
I
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
μ
s pulse test,Tch=25
°
C
10
0
10
1
10
2
10
0
10
1
10
2
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t
ID [A]
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
400
I
AS
=12A
I
AS
=18A
I
AS
=29A
starting Tch [
°
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=29A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3772-01 | N-CHANNEL SILICON POWER MOSFET |
| 2SK3773-01MR | N-CHANNEL SILICON POWER MOSFET |
| 2SK3775-01 | N-CHANNEL SILICON POWER MOSFET |
| 2SK3776-01 | N-CHANNEL SILICON POWER MOSFET |
| 2SK3777-01R | N-CHANNEL SILICON POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3772-01 | 制造商:Fuji Electric 功能描述:MOSFET N TO-220AB 制造商:Fuji Electric 功能描述:MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:300V; On Resistance Rds(on):130mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:270W ;RoHS Compliant: Yes |
| 2SK3772-01 | 制造商:Fuji Electric 功能描述:MOSFET N TO-220AB |
| 2SK3773-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK3777-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK3778-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 250V;RDS(ON) 43 Milliohms;ID 59A;TO-247;PD 410W;VGS +/-3 |
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