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參數(shù)資料
| 型號(hào)： | 2SK3767 |
| 廠商： | Toshiba Corporation |
| 元件分類(lèi)： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開(kāi)關(guān)穩(wěn)壓器 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 228K |
| 代理商： | 2SK3767 |
2SK3767
2004-12-10
2
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
±
25 V, V
DS
=
0 V
±
10
μ
A
Gate-source breakdown voltage
V
(BR) GSS
I
G
=
±
10
μ
A, V
DS
=
0 V
±
30
V
Drain cut-off current
I
DSS
V
DS
=
600 V, V
GS
=
0 V
100
μ
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
=
10 mA, V
GS
=
0 V
600
V
Gate threshold voltage
V
th
V
DS
=
10 V, I
D
=
1 mA
2.0
4.0
V
Drain-source ON resistance
R
DS (ON)
V
GS
=
10 V, I
D
=
1 A
3.3
4.5
Forward transfer admittance
Y
fs
V
DS
=
10 V, I
D
=
1 A
0.8
1.6
S
Input capacitance
C
iss
320
Reverse transfer capacitance
C
rss
30
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
100
pF
Rise time
t
r
15
Turn-on time
t
on
55
Fall time
t
f
20
Switching time
Turn-off time
t
off
Duty
<
1%, t
w
=
10
μ
s
80
ns
Total gate charge
Q
g
9
Gate-source charge
Q
gs
5
Gate-drain charge
Q
gd
V
DD
～
400 V, V
GS
=
10 V, I
D
=
2A
4
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
2
A
Pulse drain reverse current
(Note 1)
I
DRP
5
A
Forward voltage (diode)
V
DSF
I
DR
=
2 A, V
GS
=
0 V
1.7
V
Reverse recovery time
t
rr
1000
ns
Reverse recovery charge
Q
rr
I
DR
=
2 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/
μ
s
3.5
μ
C
Marking
10
V
I
D
=
1A
Output
R
L
=
200
0 V
V
GS
V
DD
～
200 V
5
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3767
Part No. (or abbreviation code)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3767(Q) | 功能描述:MOSFET N-Ch 600V 2A Rdson 4.5 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3767(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 600V, 2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3767(S4TETV,X,M | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3767(STA4,Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3767(STA4,Q,M) | 制造商:Toshiba America Electronic Components 功能描述: |
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