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參數(shù)資料
| 型號： | 2SK370-V |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | 2-4E1C, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 655K |
| 代理商： | 2SK370-V |
2SK370
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK370
For Low Noise Audio Amplifier Applications
Suitable for use as first stage for equalizer and MC head amplifiers.
High |Yfs|: |Yfs| = 22 ms (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA)
High breakdown voltage: VGDS = 40 V
High input impedance: IGSS = 1 nA (max) (VGS = 30 V)
Complementary to 2SJ108
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
40
V
Gate current
IG
10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = 30 V, VDS = 0
1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = 100 μA
40
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
2.6
20
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 μA
0.2
1.5
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz,
IDSS = 3 mA
8
22
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
30
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
6
pF
NF (1)
VDS = 10 V, ID = 1.0 mA, RG = 1 kΩ,
f
= 10 Hz
1.0
10
Noise figure
NF (2)
VDS = 10 V, ID = 1.0 mA, RG = 1 kΩ,
f
= 1 kHz
0.5
2
dB
Note: IDSS classification GR: 2.6~6.5 mA, BL: 6.0~12 mA, V: 10~20 mA
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
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