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參數(shù)資料
| 型號： | 2SK3614 |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 60 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PCP, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 28K |
| 代理商： | 2SK3614 |
2SK3614
No.7422-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7422
2SK3614
Package Dimensions
unit : mm
2062A
[2SK3614]
91603 TS IM TA-3952
N-Channel Silicon MOSFET
UltraHigh-Speed Switching Applications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
4.5
1.6
0.5
0.4
1.5
1.0
2.5
4.25max
3.0
1.5
0.4
0.75
3
2
1
(Bottom view)
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
4A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
16
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (250mm2!0.8mm)
1.5
W
Tc=25
°C
3.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=2A
2
3.6
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=2A, VGS=10V
110
145
m
RDS(on)2
ID=2A, VGS=4V
150
215
m
Marking : LK
Continued on next page.
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PDF描述 |
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| 2SK3625(2-10S1B) | 25 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3625(2-10S2B) | 25 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3635-Z | 8000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK3635 | 8000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK3635-AZ | 8000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3614-TD-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 4A SOT89 |
| 2SK3615-TL-E | 制造商:SANYO 功能描述:Nch 60V 12A 0.06 so?e` Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 12A TO-251 |
| 2SK3617-TL-E | 制造商:SANYO 功能描述:Nch 100V 6A 0.225 so?e` Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETN CH100V6ATO-252 制造商:Sanyo 功能描述:0 |
| 2SK3625(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK362-BL(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH Si 3-Pin TO-92 |
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