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參數資料
| 型號： | 2SK3608-01L |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET |
| 中文描述： | 18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數： | 3/4頁 |
| 文件大?。?/td> | 122K |
| 代理商： | 2SK3608-01L |
3
2SK3608-01L,S,SJ
FUJI POWER MOSFET
VGS=f(Qg):ID=13A, Tch=25°C
IF=f(VSD):80μs Pulse test,Tch=25°C
t=f(ID):Vcc=48V, VGS=10V, RG=10
-50
-25
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
400
450
500
R
Tch [
°
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=6.5A,VGS=10V
-50
-25
0
25
50
Tch [
°
C]
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
μ
A
V
0
10
20
30
40
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
Vcc= 100V
10
-1
10
0
10
1
10
2
10
-3
10
-2
10
-1
10
0
C
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
VSD [V]
1.25
1.50
1.75
2.00
0.1
1
10
100
I
Typical Forward Characteristics of Reverse Diode
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t
ID [A]
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PDF描述 |
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| 2SK3608-S | N-CHANNEL SILICON POWER MOSFET |
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| 2SK3611 | N-CHANNEL SILICON POWER MOSFET |
| 2SK3611-01MR | N-CHANNEL SILICON POWER MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3608-01LSC | 制造商:Fuji Electric 功能描述: |
| 2SK360IGETL | 制造商:Hitachi 功能描述:VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 2SK3610-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3611-01MRSC | 制造商:Fuji Electric 功能描述: |
| 2SK3614-TD-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 4A SOT89 |
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