參數(shù)資料
型號： 2SK3561
廠商： Toshiba Corporation
英文描述： TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI)
中文描述： 東芝場效應(yīng)晶體管硅?頻道馬鞍山類型（MOSVI）
文件頁數(shù)： 1/6頁
文件大?。?/td> 227K
代理商： 2SK3561
2SK3561
2005-01-26
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
-MOSVI)
2SK3561
Switching Regulator Applications
Low drain-source ON resistance: R
DS (ON)
= 0.75
Ω
(typ.)
High forward transfer admittance: |Y
fs
| = 6.5S (typ.)
Low leakage current: I
DSS
= 100
μ
A (V
DS
= 500 V)
Enhancement mode: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
500
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
500
V
Gate-source voltage
V
GSS
±
30
V
DC
(Note 1)
I
D
8
Drain current
Pulse (t
=
1 ms)
(Note 1)
I
DP
32
A
Drain power dissipation (Tc
=
25°C)
P
D
40
W
Single pulse avalanche energy
(Note 2)
E
AS
312
mJ
Avalanche current
I
AR
8
A
Repetitive avalanche energy (Note 3)
E
AR
4
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
-55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
3.125
°C/W
Thermal resistance, channel to ambient
R
th (ch-a)
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150
℃
.
Note 2: V
DD
=
90 V, T
ch
=
25°C(initial), L
=
8.3 mH, I
AR
=
8 A, R
G
=
25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
1
3
2
相關(guān)PDF資料
PDF描述
2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS?)
2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)
2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS?)
2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3561(Q) 功能描述:MOSFET N-Ch 500V 8A Rdson 0.85 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3561(Q,M) 功能描述:MOSFET MOSFET N-Ch 500V 8A Rdson 0.85 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3561(STA4,Q,M) 制造商:Toshiba 功能描述:TRANSISTOR
2SK3561Q 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220NIS
2SK3562 功能描述:MOSFET N-Ch 600V 6A Rdson 1.25 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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