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參數(shù)資料
| 型號(hào)： | 2SK3513-01SJ |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET |
| 中文描述： | 12 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 271K |
| 代理商： | 2SK3513-01SJ |
2
0
5
10
15
20
0.0
0.5
1.0
1.5
2.0
R
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80μs Pulse test, Tch=25°C
10V
20V
8V
7.5V
7.0V
VGS=6.5V
0.1
1
10
0.1
1
10
100
g
ID [A]
Typical Transconductance
gfs=f(ID):80μs Pulse test, VDS=25V,Tch=25°C
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
I
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80μs Pulse test, VDS=25V,Tch=25°C
Characteristics
2SK3513-01L,S,SJ
FUJI POWER MOSFET
ID=f(VDS):80μs Pulse test,Tch=25°C
0
2
4
6
8
10
12
VDS [V]
14
16
18
20
22
24
26
0
2
4
6
8
10
12
14
16
18
20
22
20V
10V
8V
7.5V
7.0V
I
Typical Output Characteristics
VGS=6.5V
0
25
50
75
100
125
150
0
50
100
150
200
250
Allowable Power Dissipation
PD=f(Tc)
P
Tc [
°
C]
0
50
100
150
200
250
300
350
400
450
500
I
AS
=5A
I
AS
=8A
I
AS
=12A
A
starting Tch [
°
C]
Maximum Avalanche Energy vs. starting Tch
E
AS
=f(starting Tch):Vcc=60V
0 25 50 75 100 125 150
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| 2SK3514-01SC | 制造商:Fuji Electric 功能描述: |
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