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參數(shù)資料
| 型號(hào)： | 2SK3503 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 中文描述： | N溝道MOS場(chǎng)效應(yīng)晶體管高速開關(guān) |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 114K |
| 代理商： | 2SK3503 |
Data Sheet D15395EJ2V0DS
2
2SK3503
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V
1.0
μ
A
Gate Leakage Current
I
GSS
V
GS
= ±7.0
V, V
DS
= 0 V
±
3.0
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 3.0 V, I
D
= 10
μ
A
0.5
0.8
1.1
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 3.0 V, I
D
= 10 mA
20
mS
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
= 1.5 V, I
D
= 1.0 mA
20
50
R
DS(on)2
V
GS
= 2.5 V, I
D
= 10 mA
7.0
15
R
DS(on)3
V
GS
= 4.0 V, I
D
= 10 mA
5.0
12
Input Capacitance
C
iss
V
GS
= 0 V
10
pF
Output Capacitance
C
oss
V
DS
= 3.0 V
13
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
3.0
pF
Turn-on Delay Time
t
d(on)
V
DD
= 3.0 V, I
D
= 10 mA
15
ns
Rise Time
t
r
V
GS
= 3.0 V
70
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
100
ns
Fall Time
t
f
110
ns
Note
Pulsed
TEST CIRCUIT SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
I
D
0
t
on
t
off
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