參數(shù)資料
型號: 2SK3494
廠商: PANASONIC CORP
元件分類: JFETs
英文描述: N-channel enhancement mode MOSFET
中文描述: 20 A, 250 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, TO-220C-G1, 3 PIN
文件頁數(shù): 2/3頁
文件大?。?/td> 73K
代理商: 2SK3494
2SK3494
2
SJG00037AED
Safe operation area
P
C
T
a
D
D
Drain-source voltage V
DS
(V)
10
1
10
2
10
1
100
1 000
1
10
100
1 000
I
DP
I
D
D
C
t
=
100
μ
s
t
1 ms
t
=
10 ms
Non repetitive pulse
T
C
=
25
°
C
100
50
00
50
25
100
75
125
150
Ambient temperature T
a
(
°
C)
C
C
(1)
(2)
(1)T
=
T
(2)Without heat sink
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Diode foward voltage
V
DSF
t
rr
I
DR
=
20 A, V
GS
=
0
L
=
230
μ
H, V
DD
=
100 V
I
DR
=
10 A, di/dt
=
100 A/
μ
s
V
DD
=
100 V, I
D
=
10 A
V
GS
=
10 V
1.5
V
Reverse recovery time
142
ns
Reverse recovery charge
Q
rr
668
nC
Gate charge load
Q
g
Q
gs
41
nC
Gate-source charge
8.4
nC
Gate-drain charge
Q
gd
14
nC
Thermal resistance (ch-c)
R
th(ch-c)
R
th(ch-a)
2.5
°C/W
Thermal resistance (ch-a)
89.2
°C/W
Electrical Characteristics (continued)
T
C
=
25
°
C
±
3
°
C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
相關(guān)PDF資料
PDF描述
2SK3495 Ultrahigh-Speed Switching Applications
2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications
2SK3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications
2SK3506 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3512 N-CHANNEL SILICON POWER MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3495 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications
2SK3495-AZ 制造商:Sony Semiconductor Solutions Division 功能描述:
2SK3497 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Power Amplifier Application
2SK3497(F) 制造商:Toshiba 功能描述:Trans MOSFET N-CH 180V 10A 3-Pin(3+Tab) TO-3PN 制造商:Toshiba 功能描述:Trans MOSFET N-CH 180V 10A 3-Pin(3+Tab) TO-3PN Cut Tape 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 180V 10A TO-3PN
2SK3497_06 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type High Power Amplifier Application