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參數(shù)資料
| 型號(hào)： | 2SK3473 |
| 元件分類： | JFETs |
| 英文描述： | 9 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-16C1B, SC-65, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 205K |
| 代理商： | 2SK3473 |
2SK3473
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3473
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 1.3 (typ.)
High forward transfer admittance: |Yfs| = 6.5 S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 720 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
900
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
900
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
9
Drain current
Pulse (t
= 1 ms)
(Note 1)
IDP
27
A
Drain power dissipation (Tc
= 25°C)
PD
150
W
Single pulse avalanche energy
(Note 2)
EAS
413
mJ
Avalanche current
IAR
9
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
0.833
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
50
°C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 9.35 mH, IAR = 9 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
1
3
2
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SK3473(F) | 制造商:Toshiba 功能描述:Nch 900V 9A 1.6@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:Transistor,MOSFET 制造商:Toshiba 功能描述:Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN |
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| 2SK3473_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator Applications |
| 2SK3474-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:STD MOSFET |
| 2SK3475 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications |
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