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參數(shù)資料
| 型號： | 2SK3472 |
| 廠商： | Toshiba Corporation |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開關穩(wěn)壓器 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 314K |
| 代理商： | 2SK3472 |
2SK3472
2002-03-04
2
Electrical Characteristics
(Tc
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
±
25 V, V
DS
=
0 V
±
10
μ
A
Drain-source breakdown voltage
V
(BR) GSS
I
G
=
±
10
μ
A, V
DS
=
0 V
±
30
V
Drain cut-OFF current
I
DSS
V
DS
=
450 V, V
GS
=
0 V
100
μ
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
=
10 mA, V
GS
=
0 V
450
V
Gate threshold voltage
V
th
V
DS
=
10 V, I
D
=
1 mA
2.0
4.0
V
Drain-source ON resistance
R
DS (ON)
V
GS
=
10 V, I
D
=
0.5 A
4.0
4.6
Forward transfer admittance
Y
fs
V
DS
=
10 V, I
D
=
0.5 A
0.3
0.8
S
Input capacitance
C
iss
180
Reverse transfer capacitance
C
rss
2
Output capacitance
C
oss
V
DS
=
25 V, V
GS
=
0 V, f
=
1 MHz
20
pF
Rise time
t
r
7
Turn-ON time
t
on
15
Fall time
t
f
30
Switching time
Turn-OFF time
t
off
70
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
5
Gate-source charge
Q
gs
3
Gate-drain (“miller”) charge
Q
gd
V
DD
～
360 V, V
GS
=
10 V, I
D
=
1 A
2
nC
Source-Drain Ratings and Characteristics
(Tc
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
1
A
Pulse drain reverse current
(Note 1)
I
DRP
2
A
Forward voltage (diode)
V
DSF
I
DR
=
1 A, V
GS
=
0 V
1.7
V
Reverse recovery time
t
rr
350
μ
s
Reverse recovery charge
Q
rr
I
DR
=
1 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/
μ
s
1.3
μ
C
Marking
Duty
<
1%, t
w
=
10
μ
s
0 V
10
V
V
GS
R
L
=
400
V
DD
～
200 V
I
D
=
0.5
A
V
OUT
1
Type
K3472
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
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