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參數(shù)資料
| 型號： | 2SK3419-E |
| 元件分類： | JFETs |
| 英文描述： | 90 A, 60 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-65, TO-3P, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 121K |
| 代理商： | 2SK3419-E |
2SK3419
Rev.2.00 Sep 07, 2005 page 4 of 7
20
4
8
12
16
–50
0
50
100
150
200
0
0.1
0.3
3
10
30
100
500
100
200
20
50
10
2
1
5
0.5
1
25°C
Tc = –25°C
75°C
VGS = 10 V
10 A, 20 A, 50 A
10 A, 20 A
ID = 50 A
Drain Current
ID (A)
Forward Transfer Admittance vs.
Drain Current
Forward
Transfer
Admittance
|y
fs
|
(S)
VDS = 10 V
Pulse Test
Case Temperature
Tc (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS(on)
(m
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
0.1
0.3
1
3
10
30
100
1000
200
500
100
20
50
10
0
10203040
50
30000
10000
1000
3000
100
80
60
40
20
0
20
80
160
240
320
400
0
4
8
16
12
1000
200
500
10
20
50
100
0.1
0.3
1
3
10
30
100
300
100
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
ID = 90 A
VDS
VGS
VDD = 50 V
25 V
10 V
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
tr
td(on)
td(off)
tf
VGS = 10 V, VDD = 30 V
PW = 5
s, duty ≤ 1 %
Reverse Drain Current
IDR (A)
Reverse
Recovery
Time
trr
(ns)
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
Capacitance
C
(pF)
Drain to Source Voltage
VDS (V)
Switching
Time
t
(ns)
Drain Current
ID (A)
Switching Characteristics
Gate Charge
Qg (nC)
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
Gate
to
Source
Voltage
V
GS
(V)
VDD = 50 V
25 V
10 V
VGS = 4 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3424 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK3424-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 30V 48A 3-Pin(3+Tab) TO-220AB Bulk |
| 2SK3424-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 2SK3424-ZK | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 2SK3426 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Impedance Conversion In Low Frequency |
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