參數(shù)資料
型號: 2SK3405
廠商: NEC Corp.
英文描述: SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
中文描述: 開關(guān)N溝道功率MOSFET的工業(yè)用
文件頁數(shù): 2/8頁
文件大?。?/td> 1386K
代理商: 2SK3405
Data Sheet D14639EJ2V0DS
2
2SK3405
ELECTRICAL CHARACTERISTICS(T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Leakage Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
20 V, V
DS
= 0 V
±
10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 24 A
12.5
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 24 A
6.5
9.0
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 24 A
9.9
14.0
m
Input Capacitance
C
iss
1800
pF
Output Capacitance
C
oss
770
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
400
pF
Turn-on Delay Time
t
d(on)
21
ns
Rise Time
t
r
13
ns
Turn-off Delay Time
t
d(off)
64
ns
Fall Time
t
f
V
DD
= 10 V , I
D
= 24 A
V
GS(on)
= 10 V
R
G
= 10
25
ns
Total Gate Charge
Q
G
34
nC
Gate to Source Charge
Q
GS
6.6
nC
Gate to Drain Charge
Q
GD
V
DD
= 16 V
V
GS
= 10 V
I
D
= 48 A
11
nC
Diode Forward Voltage
V
F(S-D)
I
F
= 48 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
38
ns
Reverse Recovery Charge
Q
rr
I
F
= 48 A, V
GS
= 0 V
di/dt = 100 A/
μ
s
29
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
1 %
V
GS
Wave Form
V
DS
Wave Form
V
GS
10 %
90 %
10 %
0
V
DS
90 %
t
d(on)
t
r
t
d(off)
t
f
τ
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
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