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參數(shù)資料
| 型號： | 2SK3403(2-10S2B) |
| 元件分類： | JFETs |
| 英文描述： | 13 A, 450 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10S2B, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 219K |
| 代理商： | 2SK3403(2-10S2B) |
2SK3403
2004-07-06
2
Electrical Characteristics (Tc
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
A
Gate-source breakdown voltage
V (BR) GSS
IG = 10 A, VDS = 0 V
±30
V
Drain cut-off current
IDSS
VDS = 450 V, VGS = 0 V
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
450
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
3.0
5.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 6 A
0.29
0.4
Forward transfer admittance
Yfs
VDS = 10 V, ID = 6 A
3.0
5.8
S
Input capacitance
Ciss
1600
Reverse transfer capacitance
Crss
17
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
220
pF
Rise time
tr
28
Turn-on time
ton
45
Fall time
tf
10
Switching time
Turn-off time
toff
56
ns
Total gate charge
Qg
34
Gate-source charge
Qgs
19
Gate-drain charge
Qgd
VDD 360 V, VGS = 10 V, ID = 13 A
15
nC
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
13
A
Pulse drain reverse current
(Note 1)
IDRP
52
A
Forward voltage (diode)
VDSF
IDR = 13 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
300
ns
Reverse recovery charge
Qrr
IDR = 13 A, VGS = 0 V,
dIDR/dt = 100 A/s
3.4
C
Marking
Duty <= 1%, tw = 10 s
0 V
10 V
VGS
RL =
33.3
VDD 200 V
ID = 6 A
Output
10
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3403
Part No. (or abbreviation code)
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