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參數(shù)資料
| 型號(hào)： | 2SK3399(2-10S2B) |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10S2B, 3 PIN |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大小： | 240K |
| 代理商： | 2SK3399(2-10S2B) |
2SK3399
2004-07-06
4
RDS (ON) – Tc
IDR – VDS
Vth – Tc
PD – Tc
160
0
1
3
2
6
5
4
80
40
0
40
80
120
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0
40
80
160
120
200
0
40
80
120
160
Drain
po
w
er
diss
ip
a
tion
P
D
(W
)
Case temperature Tc
(°C)
D
rain
-so
urc
eO
N
r
esis
tanc
e
R
DS
(ON)
(
)
Drain-source voltage VDS (V)
Drain
re
ve
rs
ec
ur
re
nt
I DR
(
A
)
Drain-source voltage VDS (V)
Capacitance – VDS
C
apaci
tanc
e
C
(p
F)
Case temperature Tc
(°C)
Case temperature Tc
(°C)
G
at
e
-s
our
ce
vo
lta
ge
V
GS
(
V
)
Total gate charge Qg (nC)
Dr
ai
n-
so
ur
ce
vo
ltag
e
V
DS
(V
)
Dynamic input/output characteristics
Gate
th
res
hol
dvol
ta
ge
V
th
(
V
)
2.5
1.5
0
80
40
0
40
80
160
120
0.5
1.0
2.5
2.0
Common source
VGS = 10 V
Pulse test
ID = 10 A
5.0
0
0.1
0.4
1
10
100
0.6
0.8
1.2
5
0.2
1
10
1
3
VGS = 0, 1 V
Common source
Tc
= 25°C
Pulse test
500
400
0
100
200
300
0
10
20
30
50
40
Common source
ID = 10 A
Tc
= 25°C
Pulse test
VDS
100
VGS
VDD = 400 V
0
5
10
15
25
20
200
3
0.1
10
100
1000
5000
1
10
100
500
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25°C
Ciss
Coss
Crss
30
3
0.3
30
300
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3399-SM(Q) | 制造商:Toshiba 功能描述:Cut Tape |
| 2SK34 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SK34 |
| 2SK3402 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK3402-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 36A 3-Pin(3+Tab) TO-251 Bulk |
| 2SK3402-Z | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
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