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參數(shù)資料
| 型號(hào)： | 2SK3397 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) |
| 中文描述： | 東芝場(chǎng)效應(yīng)晶體管硅?頻道馬鞍山型（U型馬鞍山） |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 96K |
| 代理商： | 2SK3397 |
2SK3397
2002-02-27
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS
2SK3397
)
Relay Drive and DC-DC Converter Applications
Motor Drive Applications
Low drain-source ON resistance: R
DS (ON)
= 4.0 m
(typ.)
High forward transfer admittance:
Y
fs
=
11
0 S (typ.)
Low leakage current: I
DSS
=
1
0 μA (max) (V
DS
= 30 V)
Enhancement-model: V
th
=
1
.5 to 3.0 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Tc
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
30
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
30
V
Gate-source voltage
V
GSS
±
20
V
DC
(Note 1)
I
D
70
Drain current
Pulse (Note 1)
I
DP
210
A
Drain power dissipation
P
D
125
W
Single pulse avalanche energy
(Note 2)
E
AS
273
mJ
Avalanche current
I
AR
70
A
Repetitive avalanche energy (Note 3)
E
AR
12.5
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
1.0
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: V
DD
=
25 V, T
ch
=
25°C (initial), L
=
40
μ
H, I
AR
=
70 A,
R
G
=
25
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Circuit Configuration
1
3
4
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