參數(shù)資料
型號: 2SK3380
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET(N溝道MOSFET)
中文描述: 硅?通道場效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁數(shù): 2/4頁
文件大?。?/td> 87K
代理商: 2SK3380
2SK3380
2
Absolute Maximum Ratings (Ta = 25
°
C)
Note:
1.PW
10
μ
s, duty cycle
1%
Electrical Characteristics (Ta = 25
°
C)
Note:
2.Pulse test
See characteristics curves of 2SK3288
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current I
DR
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
Ratings
30
±
20
300
1.2
300
300
150
–55 to +150
Unit
V
V
mA
A
mA
mW
°
C
°
C
Pch
Tch
Tstg
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltege drain
current
Gate to source cutoff voltage V
GS(off)
Static drain to source on state
resistance
Symbol
V
(BR)DSS
Min
30
Typ
Max
Unit
V
Test Conditions
I
D
= 100
μ
A, V
GS
= 0
V
(BR)GSS
±
20
V
I
G
=
±
100
μ
A, V
DS
= 0
I
GSS
I
DSS
±
5
1
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
1.3
1.26
2.3
1.44
V
I
D
= 10
μ
A, V
DS
= 5 V
I
= 150 mA,V
GS
= 10 V
D
R
DS(on)
R
DS(on)
2.8
3.44
I
D
= 50 mA,V
GS
= 4 V
Note
2
Forward transfer admittance
|y
fs
|
145
220
mS
I
= 150 mA, V
DS
=10 V
D
Input capacitance
Output capacitance
Reverse transfer capacitance Crss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
6
18
2
200
600
1100
1100
pF
pF
pF
ns
ns
ns
ns
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 150 mA, V
GS
= 10 V
R
L
= 66.6
t
d(on)
t
r
t
d(off)
t
f
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