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參數(shù)資料
| 型號： | 2SK3378 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅?通道場效應晶體管（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 89K |
| 代理商： | 2SK3378 |
2SK3378
2
Absolute Maximum Ratings (Ta = 25
°
C)
Note:
1.PW
≤
10
μ
s, duty cycle
≤
1%
2.Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25
°
C)
Note:
3.Pulse test
4.Marking is EN
See characteristics curves of 2SK3288
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current I
DR
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
Ratings
30
±
20
100
400
100
300
150
–55 to +150
Unit
V
V
mA
mA
mA
mW
°
C
°
C
Pch
Note 2
Tch
Tstg
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltege drain
current
Gate to source cutoff voltage V
GS(off)
Static drain to source on state
resistance
Symbol
V
(BR)DSS
Min
30
Typ
—
Max
—
Unit
V
Test Conditions
I
D
= 100
μ
A, V
GS
= 0
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
I
GSS
I
DSS
—
—
—
—
±
5
1
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
1.3
—
—
2.7
2.3
3.5
V
I
D
= 10
μ
A, V
DS
= 5 V
I
= 50 mA,V
GS
= 10 V
D
R
DS(on)
R
DS(on)
—
4.7
7.0
I
D
= 20 mA,V
GS
= 4 V
Note
3
Forward transfer admittance
|y
fs
|
55
85
—
mS
I
= 50 mA, V
DS
=10 V
D
Input capacitance
Output capacitance
Reverse transfer capacitance Crss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
—
—
—
—
—
—
—
1.6
7
0.5
100
330
940
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 50 mA, V
GS
= 10 V
R
L
= 200
t
d(on)
t
r
t
d(off)
t
f
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| 2SK3378ENTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Switching |
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| 2SK3385-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,30A,22m ohm,TO-251 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 30A 3-Pin(3+Tab) TO-251 |
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