- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄50003 > 2SK3373 2 A, 500 V, 3.2 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK3373 |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 500 V, 3.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-7J1B, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 186K |
| 代理商： | 2SK3373 |
2SK3373
2005-03-04
2
Electrical Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
A
Drain-source breakdown voltage
V (BR) GSS
IG = ±10 A, VDS = 0 V
±30
V
Drain cutoff current
IDSS
VDS = 500 V, VGS = 0 V
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 1 A
2.9
3.2
Forward transfer admittance
Yfs
VDS = 10 V, ID = 1 A
0.8
1.7
S
Input capacitance
Ciss
380
Reverse transfer capacitance
Crss
40
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
120
pF
Rise time
tr
15
Turn-on time
ton
25
Fall time
tf
20
Switching time
Turn-off time
toff
80
ns
Total gate charge
(gate-source plus gate-drain)
Qg
9
Gate-source charge
Qgs
5
Gate-drain (“Miller”) charge
Qgd
VDD 400 V, VGS = 10 V, ID = 2 A
4
nC
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
2
A
IDRP
t
= 1 ms
5
Pulse drain reverse current
(Note 1)
IDRP
t
= 100 s
12
A
Forward voltage (diode)
VDSF
IDR = 2 A, VGS = 0 V
1.5
V
Reverse recovery time
trr
1000
ns
Reverse recovery charge
Qrr
IDR = 2 A, VGS = 0 V,
dIDR/dt = 100 A/s
3.5
C
Marking
K3373
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
Duty <= 1%, tw = 10 s
0 V
10 V
VGS
RL = 200
VDD 200 V
ID = 1 A
VOUT
50
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3376MFV | 0.24 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3376TV | 0.24 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3377-Z-AZ | 20000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SK3377 | 20000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB |
| 2SK3377-Z-AZ | 20000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3373(TE16L1,NQ) | 功能描述:MOSFET MOSFET N-Ch 500V 2A Rdson=3.2Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3373_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N-Channel MOS Type Switching Regulator and DC/DC Converter Applications Motor Drive Applications |
| 2SK3373_10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
| 2SK3374 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) |
| 2SK3374_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。