參數(shù)資料
型號: 2SK3342
元件分類: JFETs
英文描述: 4.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, 2-7J1B, 3 PIN
文件頁數(shù): 2/6頁
文件大小: 231K
代理商: 2SK3342
2SK3342
2010-02-05
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cutoff current
IDSS
VDS = 250 V, VGS = 0 V
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
250
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
3.5
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
0.8
1.0
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
2.0
4.5
S
Input capacitance
Ciss
440
Reverse transfer capacitance
Crss
35
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
120
pF
Rise time
tr
15
Turnon time
ton
20
Fall time
tf
15
Switching time
Turnoff time
toff
60
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
10
Gatesource charge
Qgs
6
Gatedrain (“miller”) charge
Qgd
VDD ≈ 200 V, VGS = 10 V, ID = 4.5 A
4
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
4.5
A
Pulse drain reverse current
(Note 1)
IDRP
18
A
Forward voltage (diode)
VDSF
IDR = 4.5 A, VGS = 0 V
2.0
V
Reverse recovery time
trr
110
ns
Reverse recovery charge
Qrr
IDR = 4.5 A, VGS = 0 V,
dIDR / dt = 100 A / μs
0.47
μC
Marking
K3342
Lot No.
Note 4
Part No.
(or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental
matters such as the RoHS compatibility of Product. The RoHS is the Directive
2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical and electronic
equipment.
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