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參數(shù)資料
| 型號(hào)： | 2SK3320Y |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SMALL SIGNAL, FET |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 169K |
| 代理商： | 2SK3320Y |
2SK3320
2003-03-27
2
Electrical Characteristics (Ta
==== 25°C) (Q1, Q2 common)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = -30 V, VDS = 0
-1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = -100 mA
-50
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
1.2
14.0
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 mA
-0.2
-1.5
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
4.0
15
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
13
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
3
pF
NF (1)
VDS = 10 V, RG = 1 kW, ID = 0.5 mA,
f
= 10 Hz
5
Noise figure
NF (2)
VDS = 10 V, RG = 1 kW, ID = 0.5 mA,
f
= 1 kHz
1
dB
Note 2: IDSS classification Y (Y): 1.2~3.0 mA, GR (G): 2.6~6.5 mA, BL (L): 6.0~14.0 mA
( ) ..... IDSS rank marking
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3320BL | SMALL SIGNAL, FET |
| 2SK3322 | 5.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3322-S | 5.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3322-AZ | 5.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3322-ZK-AZ | 5.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3320-Y(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:JFET DUAL N-CH USV |
| 2SK3321 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL JUNCTION TYPE (GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS) |
| 2SK3322 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK3322-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3322-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
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