參數(shù)資料
型號： 2SK3313
元件分類： JFETs
英文描述： 12 A, 500 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： 2-10R1B, SC-67, 3 PIN
文件頁數(shù)： 2/3頁
文件大?。?/td> 416K
代理商： 2SK3313
2SK3313
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
—
±10
A
Gatesource breakdown voltage
V (BR) GSS
IG = ±100 A, VDS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 500 V, VGS = 0 V
—
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 6 A
—
0.5
0.62
Forward transfer admittance
|Yfs|
VGS = 10 V, ID = 6 A
3.0
8.5
—
S
Input capacitance
Ciss
—
2040
—
Reverse transfer capacitance
Crss
—
210
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
630
—
pF
Rise time
tr
—
22
—
Turnon time
ton
—
58
—
Fall time
tf
—
36
—
Switching time
Turnoff time
toff
—
180
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
45
—
Gatesource charge
Qgs
—
25
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 12 A
—
20
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
12
A
Pulse drain reverse current
(Note 1)
IDRP
—
48
A
Forward voltage (diode)
VDSF
IDR = 12 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
90
160
ns
Reverse recovery charge
Qrr
IDR = 12 A, VGS = 0 V
dIDR / dt = 100 A / s
—
0.25
—
C
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3313
Part No. (or abbreviation code)
相關(guān)PDF資料
PDF描述
2SK3320 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK3320Y SMALL SIGNAL, FET
2SK3320BL SMALL SIGNAL, FET
2SK3322 5.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3322-S 5.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3313(Q) 功能描述:MOSFET N-ch 500V 12A 0.62 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3313_06 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulatorand DC−DC Converter Applications Motor Drive Applications
2SK3313_10 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Chopper Regulator and DC−DC Converter Applications Motor Drive Applications
2SK3314 功能描述:MOSFET N-CH 500V 15A TO-3PN RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK3314(Q) 功能描述:MOSFET N-ch 500V 20A 0.480 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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