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參數(shù)資料
| 型號(hào)： | 2SK3310 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PI-MOSV) |
| 中文描述： | 東芝場(chǎng)效應(yīng)晶體管硅?頻道馬鞍山型（皮- MOSV） |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 234K |
| 代理商： | 2SK3310 |
2SK3310
2002-09-04
2
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
25 V, V
DS
0 V
10
A
Gate -source breakdown voltage
V
(BR) GSS
I
G
10 A, V
DS
0 V
30
V
Drain cut-off current
I
DSS
V
DS
450 V, V
GS
0 V
100
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
10 mA, V
GS
0 V
450
V
Gate threshold voltage
V
th
V
DS
10 V, I
D
1 mA
3.0
5.0
V
Drain-source ON resistance
R
DS (ON)
V
GS
10 V, I
D
5 A
0.48
0.65
Forward transfer admittance
Y
fs
V
DS
10 V, I
D
5 A
1.5
4.3
S
Input capacitance
C
iss
920
Reverse transfer capacitance
C
rss
12
Output capacitance
C
oss
V
DS
25 V, V
GS
0 V, f 1 MHz
140
pF
Rise time
t
r
25
Turn-on time
t
on
35
Fall time
t
f
10
Switching time
Turn-off time
t
off
60
ns
Total gate charge
Q
g
23
Gate-source charge
Q
gs
9
Gate-drain charge
Q
gd
V
DD
360 V, V
GS
10 V, I
D
10 A
14
nC
Source-Drain Ratings and Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
10
A
Pulse drain reverse current
(Note 1)
I
DRP
40
A
Forward voltage (diode)
V
DSF
I
DR
10 A, V
GS
0 V
1.7
V
Reverse recovery time
t
rr
280
ns
Reverse recovery charge
Q
rr
I
DR
10 A, V
GS
0 V,
dI
DR
/dt 100 A/ s
2.7
C
Marking
※
Type
K3310
※
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Duty
1%, t
w
10 s
0 V
10
V
V
GS
R
L
40
V
DD
200 V
I
D
5
A
V
OUT
1
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