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參數(shù)資料
| 型號： | 2SK3296-ZJ |
| 元件分類： | JFETs |
| 英文描述： | 35 A, 20 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | MP-25ZJ, TO-263, 3 PIN |
| 文件頁數(shù)： | 9/10頁 |
| 文件大小： | 509K |
| 代理商： | 2SK3296-ZJ |
Data Sheet D14063EJ2V0DS
6
2SK3296
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
5.9
MIN.
6.0
MAX.
15.5
MAX.
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
2)TO-262
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
(10)
4
1.3±0.2
0.75±0.3
2.54 TYP.
8.5±
0.2
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0
.5
3)TO-263 (MP-25ZK)
10.0±0.2
8.0
TYP.
2.54
0.7±0.15
9.15±0.2
2.45±0.25
15.25±0.5
1.35±0.3
123
4
2.5
4.45±0.2
1.3±0.2
0.5±0.2
0 to 8o
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.4
No plating
8.4 TYP.
0.025 to
0.25
4)TO-263 (MP-25ZJ)
(10)
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
5.7±0.4
4
2.8±0.2
4.8 MAX.
1.3±0.2
0.5±0.2
(0.5R)
(0.8R)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark
The diode connected between the gate and source of the transistor
serves as a protector against ESD.
When this device actually used, an additional protection circuit is
externally required if a voltage exceeding the rated voltage may be
applied to this device.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3296-ZK | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3297 | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3297(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3298 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3298-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 750m@10V IsolatedTO220 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 750m@10V IsolatedTO220 Bulk |
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