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參數(shù)資料
| 型號(hào)： | 2SK3290 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | 2SK3290 |
2SK3290
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Note 2
30
V
Gate to source voltage
±
20
V
Drain current
500
mA
Drain peak current
Note1
2
A
Body-drain diode reverse drain current
500
mA
Channel dissipation
400
mW
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value on the alumina ceramic board (12.5x20x0.7mm)
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
—
—
V
I
D
= 100
μ
A, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
I
DSS
—
—
±
5
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
Zero gate voltege drain
current
—
—
-1
Gate to source cutoff voltage
V
GS(off)
1.3
—
2.3
V
I
D
= 10
μ
A, V
DS
= 5 V
Static drain to source on state R
DS(on)
resistance
—
0.455
0.525
I
D
= 250 mA,V
GS
= 10 V
Note 3
R
DS(on)
|y
fs
|
Ciss
—
0.9
1.25
I
D
= 100 mA,V
GS
= 4 V
Note 3
Forward transfer admittance
350
540
—
mS
I
D
= 250 mA, V
DS
= 10 V
Note 3
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
Input capacitance
—
5
—
pF
Output capacitance
Coss
—
30
—
pF
Reverse transfer capacitance Crss
—
2
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
—
240
—
ns
I
D
= 250 mA, V
GS
= 10 V
R
L
= 40
Rise time
—
1700
—
ns
Turn-off delay time
—
850
—
ns
Fall time
Note:
—
1300
—
ns
3. Pulse test
4. Marking is BN
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|---|---|
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| 2SK3293 | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3294 | 制造商:KEXIN 制造商全稱(chēng):Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
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