參數(shù)資料
型號: 2SK3289
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Switching
中文描述: 硅?通道場效應(yīng)晶體管高速開關(guān)
文件頁數(shù): 2/5頁
文件大?。?/td> 27K
代理商: 2SK3289
2SK3289
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Note 2
30
V
Gate to source voltage
±
20
V
Drain current
300
mA
Drain peak current
Note1
1.2
A
Body-drain diode reverse drain current
300
mA
Channel dissipation
300
mW
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
10
μ
s, duty cycle
1%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
V
I
D
= 100
μ
A, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
I
DSS
±
5
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
Zero gate voltege drain
current
1
Gate to source cutoff voltage
V
GS(off)
1.3
2.3
V
I
D
= 10
μ
A, V
DS
= 5 V
Static drain to source on state R
DS(on)
resistance
1.26
3.44
I
D
= 150 mA,V
GS
= 10 V
Note 3
R
DS(on)
|y
fs
|
Ciss
2.8
3.44
I
D
= 50 mA,V
GS
= 4 V
Note 3
Forward transfer admittance
145
220
mS
I
D
= 150 mA, V
DS
=10 V
Note 3
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
Input capacitance
6
pF
Output capacitance
Coss
18
pF
Reverse transfer capacitance Crss
2
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
200
ns
I
D
= 150 mA, V
GS
= 10 V
R
L
= 66.6
Rise time
600
ns
Turn-off delay time
1100
ns
Fall time
Note:
1100
ns
3. Pulse test
4. Marking is AN
See characteristics curves of 2SK3287
相關(guān)PDF資料
PDF描述
2SK3290 Silicon N Channel MOS FET High Speed Switching
2SK3291 Ultrahigh-Speed Switching Applications
2SK3292 Ultrahigh-Speed Switching Applications
2SK3293 Ultrahigh-Speed Switching Applications
2SK3297 MOS FIELD EFFECT TRANSISTOR
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