參數(shù)資料
型號: 2SK3265
廠商: Toshiba Corporation
元件分類: DC/DC變換器
英文描述: N CHANNEL MOS TYPE (CHOPPER GEGULATORS DC-DC CONVERTER, AND MOTOR DRIVE APPLICATIONS)
中文描述: N通道馬鞍山型(斬波GEGULATORS的DC - DC轉(zhuǎn)換器和電機驅(qū)動應用)
文件頁數(shù): 2/6頁
文件大?。?/td> 266K
代理商: 2SK3265
2SK3265
2002-06-05
2
Electrical Characteristics
(Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= ±25 V
,
V
DS
= 0 V
±10
μA
Gate
source breakdown voltage
V
(BR) GSS
I
G
= ±10 μA
,
V
DS
= 0 V
±30
V
Drain cut
off current
I
DSS
V
DS
= 700 V
,
V
GS
= 0 V
100
μA
Drain
source breakdown voltage
V
(BR) DSS
I
D
= 10 mA
,
V
GS
= 0 V
700
V
Gate threshold voltage
V
th
V
DS
= 10 V,
I
D
= 1 mA
2.0
4.0
V
Drain
source ON resistance
R
DS (ON)
V
GS
= 10 V,
I
D
= 5 A
0.72
0.75
Forward transfer admittance
|Y
fs
|
V
DS
= 10 V,
I
D
= 5 A
4.0
7.0
S
Input capacitance
C
iss
1700
Reverse transfer capacitance
C
rss
40
Output capacitance
C
oss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
200
pF
Rise time
tr
40
Turn
on time
t
on
72
Fall time
t
f
42
Switching time
Turn
off time
t
off
145
ns
Total gate charge (Gate
source
plus gate
drain)
Q
g
53
Gate
source charge
Q
gs
25
Gate
drain (“miller”) charge
Q
gd
V
DD
400 V, V
GS
= 10 V, I
D
= 10 A
28
nC
Source
Drain Ratings and Characteristics
(Tc =
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
I
DR
10
A
Pulse drain reverse current
(Note 1)
I
DRP
30
A
Forward voltage (diode)
V
DSF
I
DR
= 10 A, V
GS
= 0 V
1.9
V
Reverse recovery time
t
rr
1400
ns
Reverse recovery charge
Q
rr
I
DR
= 10 A, V
GS
= 0 V
dI
DR
/
dt
=
100 A
/
μs
17.5
μC
Marking
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PDF描述
2SK3270-01 N-channel MOS-FET
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相關代理商/技術參數(shù)
參數(shù)描述
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