參數(shù)資料
型號(hào): 2SK3233
廠(chǎng)商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場(chǎng)效應(yīng)晶體管高速電源開(kāi)關(guān)
文件頁(yè)數(shù): 6/10頁(yè)
文件大?。?/td> 46K
代理商: 2SK3233
2SK3233
6
0.1
0.3
1
3
10
30
100
1000
200
500
100
20
50
10
di / dt = 100 A /
μ
s
V = 0, Ta = 25
°
C
0
50
100
150
200
250
2000
5000
1000
100
200
500
1000
800
600
400
200
0
20
16
12
8
4
10
Gate Charge Qg (nC)
20
30
40
50
0
1000
200
500
100
20
10
50
0.1
0.3
1
3
10
30
100
20
50
10
5
V = 0
f = 1 MHz
Ciss
Coss
Crss
V = 400 V
250 V
100 V
I = 5 A
V
DS
V
GS
r
d(on)
t
d(off)
t
Reverse Drain Current I
DR
(A)
R
Body-Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
D
D
G
G
Dynamic Input Characteristics
Drain Current I
D
(A)
S
Switching Characteristics
tf
V = 10 V, V = 250 V
PW = 10
μ
s, duty < 1 %
R =10
V = 100 V
250 V
400 V
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