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參數(shù)資料
| 型號： | 2SK3218-01 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | CABLE ASSEMBLY; LEAD-FREE SOLDER; BNC MALE TO SMA MALE; 50 OHM, RG196A/U COAX; *USES STANDARD 50 OHM INTERFACE CONNECTORS* |
| 中文描述： | 40 A, 150 V, 0.043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 146K |
| 代理商： | 2SK3218-01 |
3
2SK3218-01
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0
20
40
60
80
100
120
max.
typ.
Drain-source on-state resistance
RDS(on)=f(Tch):ID=20A,VGS=10V
R
]
Tch [°C]
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
Tch [°C]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
min.
typ.
max.
10
-2
10
-1
10
0
10
1
10
2
100p
1n
10n
100n
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
C
VDS [V]
Ciss
Coss
Crss
0
20
40
60
80
100
120
140
160
180
200
0
5
10
15
20
25
30
30V
75V
Vcc=120V
Typical Gate Charge Characteristics
VGS=f(Qg):ID=40A,Tch=25°C
0
25
50
75
100
125
150
V
V
Qg [nC]
VGS
VDS
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
10
20
30
40
50
60
70
80
90
100
Typical Forward Characteristics of Reverse Diode
-ID=f(VSD):80μs pulse test,Tch=25°C
10V
5V
VGS=0V
-
VSD [V]
10
-1
10
0
10
1
10
2
10
1
10
2
10
3
10
4
t
ID [A]
td(off)
tf
tr
td(on)
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10
相關(guān)PDF資料 |
PDF描述 |
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| 2SK3219-01MR | N-CHANNEL SILICON POWER MOS-FET |
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| 2SK324 | 2SK324 |
| 2SK3262-01MR | N-CHANNEL SILICON POWER MOS-FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3218-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3219-01MR | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N-CHANNEL SILICON POWER MOS-FET |
| 2SK3219-01MRSC | 制造商:Fuji Electric 功能描述: |
| 2SK322 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel Junction FET |
| 2SK3221 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
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