- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371553 > 2SK3205 (Toshiba Corporation) RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS PDF資料下載
參數(shù)資料
| 型號： | 2SK3205 |
| 廠商： | Toshiba Corporation |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開關(guān)穩(wěn)壓器 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 128K |
| 代理商： | 2SK3205 |
2SK3205
2002-01-25
2
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= ±16 V
,
V
DS
= 0 V
—
—
±10
μA
Drain cut
off current
I
DSS
V
DS
= 150 V
,
V
GS
= 0 V
—
—
100
μA
Drain
source breakdown voltage
V
(BR) DSS
I
D
= 10 mA
,
V
GS
= 0 V
150
—
—
V
Gate threshold voltage
V
th
V
DS
= 10 V,
I
D
= 1 mA
0.8
—
2.0
V
R
DS (ON)
V
GS
= 4 V,
I
D
= 2.5 A
—
0.54
0.75
Drain
source ON resistance
R
DS (ON)
V
GS
= 10 V,
I
D
= 2.5 A
—
0.36
0.5
Forward transfer admittance
|Y
fs
|
V
DS
= 10 V,
I
D
= 2.5 A
2.0
4.5
—
S
Input capacitance
C
iss
—
330
—
Reverse transfer capacitance
C
rss
—
50
—
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
—
145
—
pF
Rise time
tr
—
10
—
Turn
on time
t
on
—
15
—
Fall time
t
f
—
10
—
Switching time
Turn
off time
t
off
—
60
—
ns
Total gate charge (Gate
source
plus gate
drain)
Q
g
—
12
—
Gate
source charge
Q
gs
—
8
—
Gate
drain (“miller”) charge
Q
gd
V
DD
≈
120 V, V
GS
= 10 V, I
D
= 5 A
—
4
—
nC
Source
Drain Ratings and Characteristics
(Ta =
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
I
DR
—
—
—
5
A
Pulse drain reverse current
(Note 1)
I
DRP
—
—
—
20
A
Forward voltage (diode)
V
DSF
I
DR
= 5 A, V
GS
= 0 V
—
—
1.7
V
Reverse recovery time
t
rr
—
110
—
ns
Reverse recovery charge
Q
rr
I
DR
= 5 A, V
GS
= 0 V, dI
DR
/ dt
=
100 A / μs
—
0.47
—
nC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3216-01 | N-CHANNEL SILICON POWER MOS-FET |
| 2SK3218-01 | CABLE ASSEMBLY; LEAD-FREE SOLDER; BNC MALE TO SMA MALE; 50 OHM, RG196A/U COAX; *USES STANDARD 50 OHM INTERFACE CONNECTORS* |
| 2SK3219-01MR | N-CHANNEL SILICON POWER MOS-FET |
| 2SK321 | SI N-CHANNEL JUNCTION |
| 2SK3236 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3205(Q) | 制造商:Toshiba 功能描述:Cut Tape 制造商:Toshiba 功能描述:Trans MOSFET N-CH 150V 5A 3-Pin(3+Tab) PW-Mold |
| 2SK3205(T6L1HITJNQ | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3205(T6L1HIUO,N | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3205(TE16L1,NQ) | 制造商:Toshiba 功能描述:Cut Tape |
| 2SK3205_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications DC−DC Converter, and Motor Drive Applications |
發(fā)布緊急采購，3分鐘左右您將得到回復。