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參數(shù)資料
| 型號： | 2SK3204 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 2SK3204 |
Data sheet D13796EJ1V0DS00
2
2SK3204
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
PARAMATERS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
DS(on)1
V
GS
= 10 V, I
D
= 8 A
25
34
m
Drain to Source On-state Resistance
R
DS(on)2
V
GS
= 4 V, I
D
= 8 A
35
50
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 8 A
8.0
14
S
Drain Leakage Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
10
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
= ±20 V, V
DS
= 0 V
±10
μ
A
Input Capacitance
C
iss
940
pF
Output Capacitance
C
oss
290
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
120
pF
Turn-on Delay Time
t
d(on)
17
ns
Rise Time
t
r
150
ns
Turn-off Delay Time
t
d(off)
58
ns
Fall Time
t
f
I
D
= 8 A, V
GS(on)
= 10 V, V
DD
= 30 V,
R
G
= 10
52
ns
Total Gate Charge
Q
G
25
nC
Gate to Source Charge
Q
GS
2.9
nC
Gate to Drain Charge
Q
GD
I
D
= 15 A, V
DD
= 48 V, V
GS(on)
= 10 V
7.5
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 15 A, V
GS
= 0 V
0.92
V
Reverse Recovery Time
t
rr
45
ns
Reverse Recovery Charge
Q
rr
I
F
= 15 A, V
GS
= 0 V,
di/dt = 100 A/
μ
s
81
nC
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
→
0
V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
R
G
= 10
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ
= 1
μ
s
Duty Cycle
≤
1 %
τ
V
GS
Wave Form
D
Wave Form
V
GS
I
D
10
%
0
0
90
%
90
%
90
%
V
GS(on)
I
D
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10
%
10
%
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