- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371553 > 2SK3192 (PANASONIC CORP) Silicon N-channel power MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK3192 |
| 廠商： | PANASONIC CORP |
| 元件分類： | JFETs |
| 英文描述： | Silicon N-channel power MOSFET |
| 中文描述： | 30 A, 250 V, 0.068 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SC-92, TOP-3F-B1, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 93K |
| 代理商： | 2SK3192 |
2SK3192
2
SJG00029BED
V
GS
I
D
R
DS(on)
I
D
Y
fs
I
D
Safe operation area
P
D
T
a
I
D
V
DS
1
10
10
2
10
3
10
1
1
10
10
2
10
3
Non 25
T
C
°
C
I
D
I
DP
t
=
100
μ
s
10 ms
1 ms
DC
100 ms
Drain-source voltage V
DS
(V)
D
D
0
50
150
100
0
120
100
80
60
40
20
(1) T
T
(2) Without heat sink
P
D
3 W
(1)
(2)
P
D
Ambient temperature T
a
(
°
C)
30
25
20
15
10
5
0
2
4
6
8
10
12
14
0
T
C
=
25
°
C
V
GS
=
10 V
5 V
4 V
3 V
4.5 V
Drain-source voltage V
DS
(V)
D
D
50
40
30
20
10
0
2
4
6
8
10
0
V
DS
=
10 V
T
C
=
25
°
C
Drain current I
D
(A)
G
G
0
30
10
20
V
GS
=
10 V
T
C
=
25
°
C
0
100
80
60
40
20
D
D
)
Drain current I
D
(A)
30
25
20
15
10
5
0
5
10
15
20
25
30
35
0
V
DS
=
10 V
T
C
=
25
°
C
F
Y
f
Drain current I
D
(A)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Diode forward voltage
V
DSF
t
rr
I
DR
=
30 A, V
GS
=
0
L
=
230
μ
H, V
DD
=
100 V
I
DR
=
15 A, di/dt
=
100 A/
μ
s
V
DD
=
100 V, I
D
=
15 A
V
GS
=
10 V
1.5
V
Reverse recovery time
260
ns
Reverse recovery charge
Q
rr
1.6
μ
C
Gate charge load
Q
g
Q
gs
95
nC
Gate-source charge
34
nC
Gate-drain charge
Q
gd
12
nC
Thermal resistance (ch-c)
R
th(ch-c)
R
th(ch-a)
1.25
°
C/W
°
C/W
Thermal resistance (ch-a)
41.7
■
Electrical Characteristics (continued)
T
C
=
25
°
C
±
3
°
C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3205 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 2SK3216-01 | N-CHANNEL SILICON POWER MOS-FET |
| 2SK3218-01 | CABLE ASSEMBLY; LEAD-FREE SOLDER; BNC MALE TO SMA MALE; 50 OHM, RG196A/U COAX; *USES STANDARD 50 OHM INTERFACE CONNECTORS* |
| 2SK3219-01MR | N-CHANNEL SILICON POWER MOS-FET |
| 2SK321 | SI N-CHANNEL JUNCTION |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3199 | 制造商:Sanken Electric Co Ltd 功能描述:MOSFET N-CH 500V TO-220F 制造商:ALLEGRO 功能描述:MOS FET 制造商:Allegro MicroSystems LLC 功能描述:MOS FET |
| 2SK320 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) |
| 2SK3200 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MOSFET |
| 2SK3203(L).2SK3203(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SK3204 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。