- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370113 > 2SK3177 (Hitachi,Ltd.) Silicon N Channel MOS FET High Speed Power Switching PDF資料下載
參數(shù)資料
| 型號： | 2SK3177 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 2SK3177 |
2SK3177
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP
E
AR
Pch
Note2
200
V
Gate to source voltage
±
20
V
Drain current
15
A
Drain peak current
Note1
60
A
Body-drain diode reverse drain current
15
A
Avalanche current
Note3
15
A
Avalanche energy
Note3
15
mJ
Channel dissipation
35
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
≥
50
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
200
—
—
V
I
D
= 10 mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 200 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 8 A, V
GS
= 10 V
Note4
I
D
= 8 A, V
GS
= 4 V
Note4
I
D
= 8 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
±
20
—
—
V
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
—
—
±
10
μ
A
μ
A
Zero gate voltege drain current
—
—
10
Gate to source cutoff voltage
1.0
—
2.5
V
Static drain to source on state
—
90
115
m
m
resistance
—
95
125
Forward transfer admittance
16
20
—
S
Input capacitance
—
1600
—
pF
Output capacitance
Coss
—
510
—
pF
Reverse transfer capacitance
Crss
—
250
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
20
—
ns
I
D
= 8 A, V
GS
= 10 V
R
L
= 3.75
Rise time
—
120
—
ns
Turn-off delay time
—
400
—
ns
Fall time
—
170
—
ns
Body–drain diode forward voltage
—
0.85
—
V
I
F
= 15 A, V
GS
= 0
I
= 15 A, V
= 0
diF/ dt = 50 A/
μ
s
Body–drain diode reverse
recovery time
Note:
4. Pulse test
—
100
—
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3204 | Switching N-channel power MOS FET industrial use |
| 2SK3207 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3209 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3210 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3210L | Silicon N Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3177-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3178 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK3179 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| 2SK318 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 4A I(D) | SOT-119VAR |
| 2SK319 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。