- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄370113 > 2SK3163 (Hitachi,Ltd.) Silicon N Channel MOS FET(N溝道MOSFET) PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK3163 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管（不適用溝道MOSFET的） |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 127K |
| 代理商： | 2SK3163 |
2SK3163
2
Absolute Maximum Ratings (Ta = 25
°
C)
Note:
1.PW
≤
10
μ
s, duty cycle
≤
1%
2.Value at Tc = 25
°
C
3.Value at Tch = 25
°
C, Rg
≥
50
Electrical Characteristics (Ta = 25
°
C)
Note:
1.Pulse test
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current I
DR
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse) Note 1
Ratings
60
±
20
75
300
75
50
214
110
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°
C
°
C
I
AP Note 3
E
AR Note 3
Pch
Note 2
Tch
Tstg
Item
Drain to source breakdown voltage V
(BR)DS
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
I
D
= 10 mA, V
GS
= 0
S
I
GSS
I
DSS
V
GS(off)
R
DS(on)
60
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
—
—
1.0
—
—
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.0
8.0
80
7100
1000
280
125
25
25
60
300
520
330
1.05
90
±
0.1
10
2.5
7.5
12
—
—
—
—
—
—
—
—
—
—
—
—
—
μ
A
μ
A
V
m
m
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
V
GS
=
±
20 V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
Note 1
I
D
= 40 A, V
GS
= 10 V
Note 1
I
D
= 40 A, V
GS
= 4 V
Note 1
I
D
= 40 A, V
DS
= 10 V
Note 1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 25 V
V
GS
= 10 V
I
D
= 75 A
V
GS
= 10 V, I
D
= 40 A
R
L
= 0.75
|y
fs
|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
I
F
= 75 A, V
GS
= 0
I
F
= 75 A, V
GS
= 0
diF/ dt = 50 A/
μ
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3174A | Silicon N Channel MOS FET UHF Power Amplifier |
| 2SK3175A | Silicon N Channel MOS FET UHF Power Amplifier |
| 2SK3177 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3204 | Switching N-channel power MOS FET industrial use |
| 2SK3207 | Silicon N Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3163(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3163-E | 制造商:Renesas Electronics Corporation 功能描述:POWER MODULE - Bulk 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 75A 3-Pin(3+Tab) TO-3P 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,75A,6.0m ohm,TO-3P |
| 2SK317 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 8A I(D) | SOT-119VAR |
| 2SK3174A | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET UHF Power Amplifier |
| 2SK3175A | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET UHF Power Amplifier |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。