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參數(shù)資料
| 型號： | 2SK3162 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 46K |
| 代理商： | 2SK3162 |
2SK3162
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP
E
AR
Pch
Note2
200
V
Gate to source voltage
±
20
V
Drain current
20
A
Drain peak current
Note1
80
A
Body-drain diode reverse drain current
20
A
Avalanche current
Note3
20
A
Avalanche energy
Note3
26
mJ
Channel dissipation
35
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
≥
50
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
200
—
—
V
I
D
= 10 mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 200 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 10 A, V
GS
= 10 V
Note4
I
D
= 10 A, V
GS
= 4 V
Note4
I
D
= 10 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
±
20
—
—
V
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
—
—
±
10
μ
A
μ
A
Zero gate voltege drain current
—
—
10
Gate to source cutoff voltage
1.0
—
2.5
V
Static drain to source on state
—
60
75
m
m
resistance
—
65
85
Forward transfer admittance
15
25
—
S
Input capacitance
—
2420
—
pF
Output capacitance
Coss
—
790
—
pF
Reverse transfer capacitance
Crss
—
340
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
20
—
ns
I
D
= 10 A, V
GS
= 10 V
R
L
= 3
Rise time
—
150
—
ns
Turn-off delay time
—
630
—
ns
Fall time
—
290
—
ns
Body–drain diode forward voltage
—
0.90
—
V
I
F
= 20 A, V
GS
= 0
I
= 20 A, V
= 0
diF/ dt = 50 A/
μ
s
Body–drain diode reverse
recovery time
Note:
4. Pulse test
—
210
—
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3162(E) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-220FM Box |
| 2SK3162-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-220FM Box Tray 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,200V,20A,60m ohm,TO-220FM |
| 2SK3163 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 60V 75A 3PIN TO-P - Rail/Tube |
| 2SK3163(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3163-E | 制造商:Renesas Electronics Corporation 功能描述:POWER MODULE - Bulk 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 75A 3-Pin(3+Tab) TO-3P 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,75A,6.0m ohm,TO-3P |
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