參數(shù)資料
型號(hào): 2SK3156
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場(chǎng)效應(yīng)晶體管高速電源開關(guān)
文件頁(yè)數(shù): 2/9頁(yè)
文件大小: 53K
代理商: 2SK3156
2SK3156
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP
E
AR
Pch
Note2
150
V
Gate to source voltage
±
20
V
Drain current
20
A
Drain peak current
Note1
80
A
Body-drain diode reverse drain current
20
A
Avalanche current
Note3
20
A
Avalanche energy
Note3
30
mJ
Channel dissipation
75
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
10
μ
s, duty cycle
1%
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
50
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
150
V
I
D
= 10 mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 150 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 10 A, V
GS
= 10 V
Note4
I
D
= 10 A, V
GS
= 4 V
Note4
I
D
= 10 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
±
20
V
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
±
10
μ
A
μ
A
Zero gate voltege drain current
10
Gate to source cutoff voltage
1.0
2.5
V
Static drain to source on state
50
70
m
m
resistance
60
80
Forward transfer admittance
13
22
S
Input capacitance
1750
pF
Output capacitance
Coss
600
pF
Reverse transfer capacitance
Crss
300
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
18
ns
I
D
= 10 A, V
GS
= 10 V
R
L
= 3
Rise time
125
ns
Turn-off delay time
400
ns
Fall time
190
ns
Body–drain diode forward voltage
0.9
V
I
F
= 20 A, V
GS
= 0
I
= 20 A, V
= 0
diF/ dt = 50 A/
μ
s
Body–drain diode reverse
recovery time
Note:
4. Pulse test
170
ns
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