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參數(shù)資料
| 型號(hào)： | 2SK3152 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開關(guān) |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大小： | 51K |
| 代理商： | 2SK3152 |
2SK3152
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP
E
AR
Pch
Note2
120
V
Gate to source voltage
±
20
V
Drain current
10
A
Drain peak current
Note1
40
A
Body-drain diode reverse drain current
10
A
Avalanche current
Note3
10
A
Avalanche energy
Note3
8.5
mJ
Channel dissipation
25
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
≥
50
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
120
—
—
V
I
D
= 10 mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 120 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 5 A, V
GS
= 10 V
Note4
I
D
= 5 A, V
GS
= 4 V
Note4
I
D
= 5 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
±
20
—
—
V
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
—
—
±
10
μ
A
μ
A
Zero gate voltege drain current
—
—
10
Gate to source cutoff voltage
1.0
—
2.5
V
Static drain to source on state
—
100
130
m
m
resistance
—
130
170
Forward transfer admittance
5.5
9.5
—
S
Input capacitance
—
580
—
pF
Output capacitance
Coss
—
240
—
pF
Reverse transfer capacitance
Crss
—
130
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
11
—
ns
I
D
= 5 A, V
GS
= 10 V
R
L
= 6
Rise time
—
55
—
ns
Turn-off delay time
—
140
—
ns
Fall time
—
80
—
ns
Body–drain diode forward voltage
—
0.9
—
V
I
F
= 10 A, V
GS
= 0
I
= 10 A, V
= 0
diF/ dt = 50 A/
μ
s
Body–drain diode reverse
recovery time
Note:
4. Pulse test
—
100
—
ns
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