參數(shù)資料
型號: 2SK3141
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET(N溝道MOSFET)
中文描述: 硅?通道場效應晶體管(不適用溝道MOSFET的)
文件頁數(shù): 2/9頁
文件大?。?/td> 146K
代理商: 2SK3141
2SK3141
2
Note: 1. PW
10
μ
s, duty cycle
1%
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
50
Electrical Characteristics (Ta = 25
°
C)
Note: 1. Pulse test
Channel dissipation
Channel temperature
Storage temperature
Pch
Note 2
Tch
Tstg
100
150
–55 to +150
W
°
C
°
C
Item
Drain to source breakdown
voltage
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage V
DF
Body–drain diode reverse
recovery time
Symbol
V
(BR)DSS
30
Min
Typ
Max
Unit
V
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
GSS
I
DSS
V
GS(off)
R
DS(on)
1.0
50
4.0
5.5
80
6800
1550
500
130
16
30
50
370
550
380
1.05
80
±
0.1
10
2.5
5.0
8.5
μ
A
μ
A
V
m
m
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
V
GS
=
±
20 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
Note 1
I
D
= 40 A, V
GS
= 10 V
Note 1
I
D
= 40 A, V
GS
= 4 V
Note 1
I
D
= 40 A, V
DS
= 10 V
Note 1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 10 V
I
D
= 75 A
V
GS
= 10 V, I
D
= 40 A
R
L
= 0.25
|y
fs
|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
I
F
= 75 A, V
GS
= 0
I
F
= 75 A, V
GS
= 0
diF/ dt = 50 A/
μ
s
t
rr
Item
Symbol
Ratings
Unit
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