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參數(shù)資料
| 型號(hào)： | 2SK3140 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅?通道場效應(yīng)晶體管（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 141K |
| 代理商： | 2SK3140 |
2SK3140
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source leak current
60
—
—
±
0.1
10
V
μ
A
μ
A
V
m
m
S
I
D
= 10 mA, V
GS
= 0
V
GS
=
±
20 V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
*
1
I
D
= 30 A, V
GS
= 10 V
*
1
I
D
= 30 A, V
GS
= 4 V
*
1
I
D
= 30 A, V
DS
= 10 V
*
1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
GSS
I
DSS
V
GS(off)
R
DS(on)
—
—
Zero gate voltage drain current
—
—
Gate to source cutoff voltage
1.0
—
2.5
—
6.0
7.5
Static drain to source on state
resistance
—
8.0
12
Forward transfer admittance
|y
fs
|
Ciss
45
75
—
Input capacitance
—
7100
—
pF
Output capacitance
Coss
—
1000
—
pF
Reverse transfer capacitance
Crss
—
280
—
pF
Total gate charge
Qg
—
125
—
nc
Gate to source charge
Qgs
—
25
—
nc
Gate to drain charge
Qgd
—
25
—
nc
V
DD
= 25 V
V
GS
= 10 V
I
D
= 60 A
V
GS
= 10 V, I
D
= 30 A
R
L
= 1
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
60
—
ns
Rise time
—
250
—
ns
Turn-off delay time
—
540
—
ns
Fall time
—
320
—
ns
Body–drain diode forward voltage
—
1.0
—
V
I
F
= 60 A, V
GS
= 0
I
= 60 A, V
= 0
diF/ dt = 50 A/
μ
s
Body–drain diode reverse
recovery time
—
80
—
ns
Note:
1. Pulse test
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SK3140(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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| 2SK3141-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3142 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3142-01(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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