參數(shù)資料
型號： 2SK313
英文描述： Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
中文描述： 晶體管| MOSFET的| N溝道| 450V五（巴西）直| 12A條（丁）|至3
文件頁數(shù)： 6/12頁
文件大?。?/td> 61K
代理商： 2SK313
2SK3134(L),2SK3134(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
——V
I
D = 10mA, VGS = 0
Gate to source leak current
I
GSS
——
±0.1
AV
GS = ±20V, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
AV
DS = 30V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.5
V
I
D = 1mA, VDS = 10V
Note 1
Static drain to source on state R
DS(on)
—
4.0
5.0
m
I
D = 40A, VGS = 10V
Note 1
resistance
—
5.5
8.5
m
I
D = 40A, VGS = 4V
Note 1
Forward transfer admittance
|y
fs|50
80
—
S
I
D = 40A, VDS = 10V
Note 1
Input capacitance
Ciss
—
6800
—
pF
V
DS = 10V
Output capacitance
Coss
—
1550
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
500
—
pF
f = 1MHz
Total gate charge
Qg
—
130
—
nc
V
DD = 10V
Gate to source charge
Qgs
—
16
—
nc
V
GS = 10V
Gate to drain charge
Qgd
—
30
—
nc
I
D = 75A
Turn-on delay time
t
d(on)
—
50
—
ns
V
GS = 10V, ID = 40A
Rise time
t
r
—
370
—
ns
R
L = 0.25
Turn-off delay time
t
d(off)
—
550
—
ns
Fall time
t
f
—
380
—
ns
Body–drain diode forward
voltage
V
DF
—
1.05
—
V
I
F = 75A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
80
—
ns
I
F = 75A, VGS = 0
diF/ dt =50A/
s
Note:
1. Pulse test
相關(guān)PDF資料
PDF描述
2SK315E Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
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2SK317 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3130 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type
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2SK3130_06 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type
2SK3130_09 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator Applications
2SK3131 功能描述:MOSFET N-CH 500V 50A TO-3P(L) RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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