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參數(shù)資料
| 型號(hào)： | 2SK3132 |
| 廠(chǎng)商： | Toshiba Corporation |
| 英文描述： | Shrink Tubing; Tubing Size Diameter:0.375"; Wall Thickness Recovered Nominal:0.05"; Inner Diameter Max Recovered:0.130"; Expanded Inner Diameter:0.375"; Material:Polyolefin |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 312K |
| 代理商： | 2SK3132 |
2SK3132
2002-01-25
2
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= ±25 V
,
V
DS
= 0 V
—
—
±10
μA
Gate
source breakdown voltage
V
(BR) GSS
I
G
= ±10 μA
,
V
DS
= 0 V
±30
—
—
V
Drain cut
off current
I
DSS
V
DS
= 500 V
,
V
GS
= 0 V
—
—
100
μA
Drain
source breakdown voltage
V
(BR) DSS
I
D
= 10 mA
,
V
GS
= 0 V
500
—
—
V
Gate threshold voltage
V
th
V
DS
= 10 V,
I
D
= 1 mA
2.4
—
3.4
V
Drain
source ON resistance
R
DS (ON)
V
GS
= 10 V,
I
D
= 25 A
—
0.07
0.095
Forward transfer admittance
|Y
fs
|
V
DS
= 10 V,
I
D
= 25 A
15
33
—
S
Input capacitance
C
iss
—
11000
—
Reverse transfer capacitance
C
rss
—
2100
—
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
—
4200
—
pF
Rise time
tr
—
105
—
Turn
on time
t
on
—
160
—
Fall time
t
f
—
65
—
Switching time
Turn
off time
t
off
—
245
—
ns
Total gate charge (Gate
source
plus gate
drain)
Q
g
—
280
—
Gate
source charge
Q
gs
—
150
—
Gate
drain (“miller”) charge
Q
gd
V
DD
≈
400 V, V
GS
= 10 V, I
D
= 50 A
—
130
—
nC
Source
Drain Ratings and Characteristics
(Ta =
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
I
DR
—
—
—
50
A
Pulse drain reverse current
(Note 1)
I
DRP
—
—
—
200
A
Forward voltage (diode)
V
DSF
I
DR
= 25 A, V
GS
= 0 V
—
—
1.7
V
Reverse recovery time
t
rr
—
600
—
ns
Reverse recovery charge
Q
rr
I
DR
= 50 A, V
GS
= 0 V
dI
DR
/ dt
=
100 A / μs
—
12
—
μC
Marking
※
Type
TOSHIBA
2SK3132
※
Lot Number
Month(starting from alphabet A)
Year
(last number of the christian era)
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SK3132(Q) | 功能描述:MOSFET N-ch 500V 50A 0.110 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3132_06 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications |
| 2SK3132_09 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Chopper Regulator DC−DC Converter and Motor Drive Applications |
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| 2SK3133L | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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